Hydrogen desorption in SiGe films: A diffusion limited process

Hydrogen desorption in SiGe films: A diffusion limited process

Preparation and Hydrogen Absorption/Desorption of Nanoporous Palladium Thin Films

Nanoporous Pd (np-Pd) was prepared by co-sputtering Pd-Ni alloy films onto Si substrates, followed by chemical dealloying with sulfuric acid. X-ray diffractometry and chemical analysis were used to track the extent of dealloying. The np-Pd structure was changed from particle-like to sponge-like by diluting the sulfuric acid etchant. Using suitable precursor alloy composition and dealloying cond...

Raman and Ir Study of Narrow Bandgap A-sige and Μc-sige Films Deposited Using Different Hydrogen Dilution

Hydrogenated amorphous silicon-germanium (aSiGe:H) films and n-i-p solar cells near the threshold of microcrystalline formation have been prepared by plasma enhanced chemical vapor deposition (PECVD) with a fixed germane to disilane ratio of 0.72 and a wide range of hydrogen dilution RH=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240. The effects of RH on the structural ...

Non-Markovian diffusion and the adsorption-desorption process.

The non-Markovian diffusion of dispersed particles in a semi-infinite cell of an isotropic fluid limited by an adsorbing-desorbing surface is theoretically investigated. The density of dispersed particles in the bulk is a time dependent function and the time dependent density of surface particles is governed by a modified kinetic equation with a time dependent kernel. In this framework, the den...

Dopant diffusion in Si and SiGe

Dopant diffusion in semiconductors is an interesting phenomenon from both technological and scientific points of view. Firstly, dopant diffusion is taking place during most of the steps in electronic device fabrication and, secondly, diffusion is related to fundamental properties of the semiconductor, often controlled by intrinsic point defects: self-interstitials and vacancies. This thesis inv...